to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors ZTX450 transistor (npn) features z low breakdown voltage z general purpose amplifier transistor maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 45 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 625 mw r ja thermal resistance from junction to ambient 200 /w t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo * i c =10ma, i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =45v, i e =0 0.1 a emitter cut-off current i ebo v eb =4v, i c =0 0.1 a h fe(1) * v ce =10v, i c =150ma 100 300 dc current gain h fe(2) * v ce =10v, i c =1a 15 collector-emitter saturation voltage v ce(sat) * i c =150ma, i b =15ma 0.25 v base-emitter saturation voltage v be(sat) * i c =150ma, i b =15ma 1.1 v transition frequency f t v ce =10v,i c =50ma,f=100mhz 150 mhz collector output capacitance c ob v cb =10v, i c =0, f=1mhz 15 pf *pulse test 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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